Samsung has begun the mass production of the first ever 12Gigabit (1.5GB) LPDDR4 RAM for mobile devices based on its 20nm process technology. It has fueled speculations that the next year’s flagship smartphone Galaxy S7 may boast of 6GB RAM. Samsung points out that the 12Gb DDR4 DRAM would enable 6GB of mobile RAM using just four chips (1.5GB each).
New chip is 30% faster, 20% more efficient
The Korean electronics giant claimed it was the only solution to pack 6GB RAM in the smartphone. What’s more, the 6GB module using 12Gb DRAM will occupy the same amount of space as 3GB RAM modules with 6Gb chips. Samsung said the new chips could be incorporated “in the next generation flagship devices,” meaning it is likely to make way into the Galaxy S7.
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The new modules are 30% faster than Samsung’s 8Gb chips used in many of its 4GB devices, resulting in better performance. What’s more, they are 20% more energy efficient, which should help improve the battery life in Samsung’s future phones. Joo Sun Choi, EVP of Memory Sales and Marketing at Samsung Electronics, said the new chips will allow consumers to enjoy the maximum performance and seamless multitasking.
Galaxy S7 may feature Snapdragon 820 SoC
Leaked documents revealed last month that Samsung was testing Qualcomm’s Snapdragon 820 processor for use in the Galaxy S7. It indicates that the Korean company may launch two versions of Galaxy S7 next year: one featuring Snapdragon 820, and another powered by Samsung’s in-house Exynos 7422 processor. Earlier this week, sources familiar with the matter told Phone Arena that Samsung had expanded the team of engineers working on optimizing Snapdragon 820 for Galaxy S7.
Samsung has been testing Snapdragon 820 on its next-gen flagship phone for months, and results have been satisfactory so far, reported DreamX. The Korean company has switched the Galaxy S7 development process to “Agile” as it aims to develop the device by December 2015. The Galaxy S7 is widely expected to be announced in early 2016.